TSM4539D complementary enhancement mosfet 1/4 version: a12 sop - 8 mosfet product summary v ds (v) r ds(on) (m ? ) i d (a) n-channel 30 28 @ v gs = 10v 6.5 42 @ v gs = 4.5v 5.0 p-channel -30 65 @ v gs = -10v -4.2 90 @ v gs = -4.5v -3.5 features advance trench process technology high density cell design for ultra low on-resistan ce application load switch pa switch ordering information part no. package packing TSM4539Dcs rlg sop-8 2.5kpcs / 13 reel note: g denote for halogen free product mosfet absolute maximum rating (t a =25 o c unless otherwise noted) parameter symbol n-ch limit p-ch limit unit drain-source voltage v ds 30 -30 v gate-source voltage v gs 20 20 v continuous drain current, v gs i d 6.5 -4.2 a pulsed drain current, i dm 28 -20 a drain-source diode forward current i s 2.5 -1.9 a power dissipation @ ta = 25 o c p d 2.1 2.1 w operating junction temperature t j 150 o c operating junction and storage temperature range t j , t stg -55 ~ +150 o c thermal performance parameter symbol n-ch limit p-ch limit unit junction to ambient thermal resistance r ? ja 62.5 62.5 o c/w junction to lead thermal resistance r ? jl 40 40 o c/w notes: a. pulse width limited by the maximum junction temp erature b. surface mounted on fr4 board using 1 inch sq pad size, t 5sec. c. surge applied at rated load conditions, half-wav e, single phase, 60hz. block diagram n-channel p-channel pin definition : 1. source 1 8. drain 1 2. gate 1 7. drain 1 3. source 2 6. drain 2 4. gate 2 5. drain 2
TSM4539D complementary enhancement mosfet 2/4 version: a12 electrical specifications (t a =25 o c unless otherwise noted) parameter conditions symbol min typ max unit static drain-source breakdown voltage v gs =0v, i d = 250ua bv dss n-ch 30 -- -- v v gs =0v, i d =-250ua p-ch -30 -- -- gate threshold voltage v ds =v gs , i d = 250a v gs(th) n-ch 1.0 1.4 3.0 v v ds =v gs , i d =-250a p-ch -1.0 -1.5 -3.0 gate body leakage v gs = 20v, v ds =0v i gss n-ch -- -- 100 na v gs = 20v, v ds =0v p-ch -- -- 10 zero gate voltage drain current v ds =24v, v gs =0v i dss n-ch -- -- 1 a v ds =-24v, v gs =0v p-ch -- -- -1 drain-source on-state resistance a v gs =10v, i d =6.5a r ds(on) n-ch -- 23 28 m ? v gs =-10v, i d =-4.2a p-ch -- 50 65 v gs =4.5v, i d =5a n-ch -- 35 42 v gs =-4.5v, i d =-3.5a p-ch 82 90 dynamic b total gate charge n-channel v ds =10v, i d =1a, v gs =10v q g n-ch -- 7 -- nc p-ch -- 9.7 -- gate-source charge q gs n-ch -- 1.6 -- p-channel v ds =-15v, i d =-5.2a, v gs =-10v p-ch -- 1.6 -- gate-drain charge q gd n-ch -- 1.0 -- p-ch -- 1.3 -- input capacitance n-channel v ds =15v, v gs = 0v, f = 1.0mhz c iss n-ch -- 610 -- pf p-ch -- 100 -- output capacitance c oss n-ch -- 77 -- p-channel v ds =-15v, v gs = 0v, f = 1.0mhz p-ch -- 551 -- reverse transfer capacitance c rss n-ch -- 90 -- p-ch -- 60 -- switching b turn-on delay time n-channel v dd =15v, i d = 1a, v gen =10v, r g = 6 ? t d(on) n-ch -- 7 -- ns p-ch -- 6.2 -- turn-on rise time t r n-ch -- 10 -- p-ch -- 6.2 -- turn-off delay time p-channel v dd =-15v, i d = -1a, v gen =-10v, r g = 6 ? t d(off) n-ch -- 16 -- p-ch -- 26 -- turn-off fall time t f n-ch -- 7 -- p-ch -- 5.5 -- diode forward voltage i s =1 a, v gs = 0v v sd n-ch -- -- 1.0 v i s =-1.9a, v gs = 0v p-ch -- -- -1.3 notes: a. pulse test: pw 300s, duty cycle 2% b. for design aid only, not subject to production t esting.
TSM4539D complementary enhancement mosfet 3/4 version: a12 sop-8 mechanical drawing sop-8 dimension dim millimeters inches min max min max. a 4.80 5.00 0.189 0.196 b 3.80 4.00 0.150 0.157 c 1.35 1.75 0.054 0.068 d 0.35 0.49 0.014 0.019 f 0.40 1.25 0.016 0.049 g 1.27bsc 0.05bsc k 0.10 0.25 0.004 0.009 m 0o 7o 0o 7o p 5.80 6.20 0.229 0.244 r 0.25 0.50 0.010 0.019
TSM4539D complementary enhancement mosfet 4/4 version: a12 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any erro rs or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and co nditions of sale for such products, tsc assumes no liability wh atsoever, and disclaims any express or implied warr anty, relating to sale and/or use of tsc products includi ng liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, cop yright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applica tions. customers using or selling these products for use i n such applications do so at their own risk and agr ee to fully indemnify tsc for any damages resulting from such i mproper use or sale.
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